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ion-sensitive field-effect transistors  (Microsensors Inc)

 
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    Microsensors Inc ion-sensitive field-effect transistors
    Ion Sensitive Field Effect Transistors, supplied by Microsensors Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/ion-sensitive+field-effect+transistors/ion+sensitive+field+effect+transistors/pm40525330-34-2-15
    Average 90 stars, based on 1 article reviews
    ion-sensitive field-effect transistors - by Bioz Stars, 2026-09
    90/100 stars

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    Related Articles

    other:

    Article Title: Floating gate field effect transistors for chemical and/or biological sensing
    Article Snippet: This mechanism has been exploited to design various types of silicon based ISFETs. (See, e.g., C. G. Jakobson, U. Dinnar, M. Feinsod, and Y. Nemirovsky, “Ion-Sensitive Field-Effect Transistors in Standard CMOS Fabrication by Post Processing,” IEEE Sensors Journal, (2002); and J. Janata, “Electrochemical Microsensors,” Proceedings of the IEEE, Vol.

    Article Title: Continuous and automatic hexavalent chromium sensing using an ion-selective membrane deposited ion-sensitive field-effect transistor device integrating a microfluidic control system.
    Article Snippet: Heavy metal ion testing in water is vital in various applications, including domestic water quality, agricultural, and industrial wastewater discharge monitoring.. However, current water testing methods require tedious and prolonged sample processes with bulky equipment operated by well-trained technicians.. To address the above problems, we propose an ion-sensitive field-effect transistor (ISFET) deposited with an ion-selective membrane (ISM) for real-time and continuous hexavalent chromium (Cr(VI)) detection.



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    Simplified circuit diagram. Components are shown in the 3D rendering (top) of the printed circuit board (PCB) and labeled by number corresponding to the schematic (bottom). Their voltage requirements and communication protocols are also shown. Blue boxes indicate components attached to the stretchable cables as shown in the top 3D rendering. Strain gauges (SG) were glued to the magnesium and titanium plates as two Wheatstone half-bridges, with bridge completion resistors (R) soldered to the PCB inside the titanium case. One bridge was used to measure axial loading and the other for measuring in-plane bending, by gluing the gauges appropriately. They were sampled with a 24-bit analog-to-digital converter (ADC, 3) that was converted to the correct voltage level (using the level shifter, 2) and communicated with the microcontroller (1) using the serial peripheral interface (SPI). The temperature sensors at two locations (osteotomy and reference) and the accelerometer (4) were read using the inter-integrated circuit (IIC) bus. The pH sensor (ISFET), whose gate-source voltage ( V GS ) was conditioned to linearly depend on pH (5), was amplified with a gain of 3.6 and read using a 12-bit ADC internal to the microcontroller. Data was stored in nonvolatile memory (6) using the quad serial peripheral interface (QSPI).

    Journal: Bioactive Materials

    Article Title: Development of an implantable sensor system for in vivo strain, temperature, and pH monitoring: comparative evaluation of titanium and resorbable magnesium plates

    doi: 10.1016/j.bioactmat.2024.09.015

    Figure Lengend Snippet: Simplified circuit diagram. Components are shown in the 3D rendering (top) of the printed circuit board (PCB) and labeled by number corresponding to the schematic (bottom). Their voltage requirements and communication protocols are also shown. Blue boxes indicate components attached to the stretchable cables as shown in the top 3D rendering. Strain gauges (SG) were glued to the magnesium and titanium plates as two Wheatstone half-bridges, with bridge completion resistors (R) soldered to the PCB inside the titanium case. One bridge was used to measure axial loading and the other for measuring in-plane bending, by gluing the gauges appropriately. They were sampled with a 24-bit analog-to-digital converter (ADC, 3) that was converted to the correct voltage level (using the level shifter, 2) and communicated with the microcontroller (1) using the serial peripheral interface (SPI). The temperature sensors at two locations (osteotomy and reference) and the accelerometer (4) were read using the inter-integrated circuit (IIC) bus. The pH sensor (ISFET), whose gate-source voltage ( V GS ) was conditioned to linearly depend on pH (5), was amplified with a gain of 3.6 and read using a 12-bit ADC internal to the microcontroller. Data was stored in nonvolatile memory (6) using the quad serial peripheral interface (QSPI).

    Article Snippet: The pH sensor consists of an ion-sensitive field effect transistor (ISFET) that has a sensing area of 1.2 × 3 mm 2 with a 2 mm diameter Ag/AgCl reference electrode combined in a 10 mm diameter package (MSFET3351, Microsens SA, Switzerland).

    Techniques: Labeling, Amplification